Defect review SEM for observing and analyzing the nano world
The LEXa-10 DR-SEM enables defect observation and analysis with charge mitigation using the low vacuum technology implemented in the HOLON photomask CD-SEM.
4" to 8" wafers
|SEM spatial resolution||3nm|
|EDS energy resolution||127eV|
*SMIF POD Autoloader; option
*This product is build-to-order manufacturing
LEXa-10 HR is an enhanced version of the LEXa-10 Mask DR-SEM, developed for observing and analyzing microscopic defects on leading-edge masks such as EUV multi-layer masks. The system includes HOLON’s Aberration Correction and Charge Mitigation technologies, providing higher quality SEM images of mask defects.
A more sensitive EDS detector is also implemented, enabling faster EDS analysis to accelerate the yield ramp of high-end mask processes.
Based on technologies developed for the LEXa-10, these additional features have been implemented in the LEXa-10 HR for observing and analyzing nano-sized defects on photomasks, EUV masks, NIL molds, etc:
Please click here for further information.